Title: Sequential infiltration synthesis for enhancing multiple-patterning lithography

Abstract

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Inventors:

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Issue Date:

2020-02-25

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1632615

Patent Number(s):

10571803

Application Number:

15/620,318

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/3065 - Plasma etching
H01L21/0273 - {characterised by the treatment of photoresist layers}

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

G03F7/0002 - {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
G03F7/405 - {Treatment with inorganic or organometallic reagents after imagewise removal}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/3081 - {characterised by their composition, e.g. multilayer masks, materials}
H01L21/3086 - {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 06/12/2017

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 42 ENGINEERING; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY