Sequential infiltration synthesis for enhancing multiple-patterning lithography
Abstract
Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632615
- Patent Number(s):
- 10571803
- Application Number:
- 15/620,318
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/12/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States: N. p., 2020.
Web.
Darling, Seth B., Elam, Jeffrey W., & Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States.
Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Tue .
"Sequential infiltration synthesis for enhancing multiple-patterning lithography". United States. https://www.osti.gov/servlets/purl/1632615.
@article{osti_1632615,
title = {Sequential infiltration synthesis for enhancing multiple-patterning lithography},
author = {Darling, Seth B. and Elam, Jeffrey W. and Tseng, Yu-Chih},
abstractNote = {Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {2}
}