Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
Abstract
A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.
- Inventors:
- Issue Date:
- Research Org.:
- University of Maine, Toledo, OH (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175234
- Patent Number(s):
- 6852614
- Application Number:
- 09/815,958
- Assignee:
- University of Maine (Toledo, OH)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- NERL-ZAF-8-17619-14
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Compaan, Alvin D., Price, Kent J., Ma, Xianda, and Makhratchev, Konstantin. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen. United States: N. p., 2005.
Web.
Compaan, Alvin D., Price, Kent J., Ma, Xianda, & Makhratchev, Konstantin. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen. United States.
Compaan, Alvin D., Price, Kent J., Ma, Xianda, and Makhratchev, Konstantin. Tue .
"Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen". United States. https://www.osti.gov/servlets/purl/1175234.
@article{osti_1175234,
title = {Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen},
author = {Compaan, Alvin D. and Price, Kent J. and Ma, Xianda and Makhratchev, Konstantin},
abstractNote = {A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 08 00:00:00 EST 2005},
month = {Tue Feb 08 00:00:00 EST 2005}
}
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Works referenced in this record:
Heavy p ‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
journal, February 1993
- Han, J.; Stavrinides, T. S.; Kobayashi, M.
- Applied Physics Letters, Vol. 62, Issue 8