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Title: High gain photoconductive semiconductor switch having tailored doping profile zones

Abstract

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Inventors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [3];  [1];  [1];  [1]
  1. Albuquerque, NM
  2. Edgewood, NM
  3. Sandia Park, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873800
Patent Number(s):
6248992
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
photoconductive; semiconductor; switch; tailored; doping; profile; zones; beneath; extending; laterally; electrical; contacts; device; sufficient; depth; lateral; extent; isolate; damage; caused; current; filaments; created; formed; etching; depressions; substrate; conducting; epitaxial; regrowth; material; desired; surface; epitaxy; deep; diffusion; processes; reduce; energy; density; suppressing; collective; impact; ionization; formation; near; contact; reducing; intensity; enhanced; spreading; photoconductive semiconductor; energy density; electrical contacts; electrical contact; damage caused; semiconductor switch; enhanced current; lateral extent; doping profile; diffusion process; sufficient depth; tailored doping; extending laterally; profile zones; /250/257/

Citation Formats

Baca, Albert G, Loubriel, Guillermo M, Mar, Alan, Zutavern, Fred J, Hjalmarson, Harold P, Allerman, Andrew A, Zipperian, Thomas E, O'Malley, Martin W, Helgeson, Wesley D, Denison, Gary J, Brown, Darwin J, Sullivan, Charles T, and Hou, Hong Q. High gain photoconductive semiconductor switch having tailored doping profile zones. United States: N. p., 2001. Web.
Baca, Albert G, Loubriel, Guillermo M, Mar, Alan, Zutavern, Fred J, Hjalmarson, Harold P, Allerman, Andrew A, Zipperian, Thomas E, O'Malley, Martin W, Helgeson, Wesley D, Denison, Gary J, Brown, Darwin J, Sullivan, Charles T, & Hou, Hong Q. High gain photoconductive semiconductor switch having tailored doping profile zones. United States.
Baca, Albert G, Loubriel, Guillermo M, Mar, Alan, Zutavern, Fred J, Hjalmarson, Harold P, Allerman, Andrew A, Zipperian, Thomas E, O'Malley, Martin W, Helgeson, Wesley D, Denison, Gary J, Brown, Darwin J, Sullivan, Charles T, and Hou, Hong Q. Mon . "High gain photoconductive semiconductor switch having tailored doping profile zones". United States. https://www.osti.gov/servlets/purl/873800.
@article{osti_873800,
title = {High gain photoconductive semiconductor switch having tailored doping profile zones},
author = {Baca, Albert G and Loubriel, Guillermo M and Mar, Alan and Zutavern, Fred J and Hjalmarson, Harold P and Allerman, Andrew A and Zipperian, Thomas E and O'Malley, Martin W and Helgeson, Wesley D and Denison, Gary J and Brown, Darwin J and Sullivan, Charles T and Hou, Hong Q},
abstractNote = {A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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