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Title: Nanostructures having high performance thermoelectric properties

Abstract

The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1132071
Patent Number(s):
8729381
Application Number:
12/673,366
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008 Aug 21
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, and Delgado, Raul Diaz. Nanostructures having high performance thermoelectric properties. United States: N. p., 2014. Web.
Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, & Delgado, Raul Diaz. Nanostructures having high performance thermoelectric properties. United States.
Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, and Delgado, Raul Diaz. Tue . "Nanostructures having high performance thermoelectric properties". United States. https://www.osti.gov/servlets/purl/1132071.
@article{osti_1132071,
title = {Nanostructures having high performance thermoelectric properties},
author = {Yang, Peidong and Majumdar, Arunava and Hochbaum, Allon I and Chen, Renkun and Delgado, Raul Diaz},
abstractNote = {The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 20 00:00:00 EDT 2014},
month = {Tue May 20 00:00:00 EDT 2014}
}

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    Works referencing / citing this record:

    Arrays of long nanostructures in semiconductor materials and methods thereof
    patent, August 2017


    Ultra-long silicon nanostructures, and methods of forming and transferring the same
    patent, June 2017


    Low thermal conductivity matrices with embedded nanostructures and methods thereof
    patent, December 2016


    Method and structure for thermoelectric unicouple assembly
    patent, February 2016


    Arrays of long nanostructures in semiconductor materials and methods thereof
    patent, January 2016


    Nanostructures having high performance thermoelectric properties
    patent, December 2015