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Title: Nanostructures having high performance thermoelectric properties

Abstract

The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1132071
Patent Number(s):
8729381
Application Number:
12/673,366
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008 Aug 21
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, and Delgado, Raul Diaz. Nanostructures having high performance thermoelectric properties. United States: N. p., 2014. Web.
Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, & Delgado, Raul Diaz. Nanostructures having high performance thermoelectric properties. United States.
Yang, Peidong, Majumdar, Arunava, Hochbaum, Allon I, Chen, Renkun, and Delgado, Raul Diaz. Tue . "Nanostructures having high performance thermoelectric properties". United States. https://www.osti.gov/servlets/purl/1132071.
@article{osti_1132071,
title = {Nanostructures having high performance thermoelectric properties},
author = {Yang, Peidong and Majumdar, Arunava and Hochbaum, Allon I and Chen, Renkun and Delgado, Raul Diaz},
abstractNote = {The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {5}
}

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Works referenced in this record:

Synthesis of Ordered Single Crystal Silicon Nanowire Arrays
journal, August 2001


Thermoelectric Cooling and Power Generation
journal, July 1999


Thermal conductivity of individual silicon nanowires
journal, October 2003


Transport properties of silicon
journal, August 1991


Dendrite-Assisted Growth of Silicon Nanowires in Electroless Metal Deposition
journal, February 2003


Langmuir−Blodgett Silver Nanowire Monolayers for Molecular Sensing Using Surface-Enhanced Raman Spectroscopy
journal, September 2003


Phonon-boundary scattering in thin silicon layers
journal, September 1997


Temperature-Dependent Thermal Conductivity of Single-Crystal Silicon Layers in SOI Substrates
journal, February 1998


Phonon scattering in silicon films with thickness of order 100 nm
journal, May 1999


Controlled Growth of Si Nanowire Arrays for Device Integration
journal, March 2005


Measuring Thermal and Thermoelectric Properties of One-Dimensional Nanostructures Using a Microfabricated Device
journal, September 2003


Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit
journal, February 2004


Quantum Dot Superlattice Thermoelectric Materials and Devices
journal, September 2002


Thin-film thermoelectric devices with high room-temperature figures of merit
journal, October 2001


Phonon heat conduction in a semiconductor nanowire
journal, March 2001


Thermal conductivity of isotopically enriched silicon
journal, June 2000


Thermal conductivity of amorphous solids above the plateau
journal, March 1987


Seebeck Effect in Silicon
journal, May 1955


The seebeck effect in silicon ICs
journal, December 1984


Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays
journal, April 2005


Aligned Single-Crystalline Si Nanowire Arrays for Photovoltaic Applications
journal, September 2005


Thermal conductivity and thermoelectric power of heavily doped n-type silicon
journal, March 1970