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Title: Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials

Abstract

A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.

Inventors:
; ;
Issue Date:
Research Org.:
University of Houston System, Houston, TX (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1423436
Patent Number(s):
9905744
Application Number:
14/307,111
Assignee:
UNIVERSITY OF HOUSTON SYSTEM (Houston, TX); MASSACHUSETTS INSTITUTE OF TECHNOLOGY (Cambridge, MA)
DOE Contract Number:  
SC0001299
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jun 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ren, Zhifeng, Zhang, Qian, and Chen, Gang. Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials. United States: N. p., 2018. Web.
Ren, Zhifeng, Zhang, Qian, & Chen, Gang. Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials. United States.
Ren, Zhifeng, Zhang, Qian, and Chen, Gang. Tue . "Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials". United States. https://www.osti.gov/servlets/purl/1423436.
@article{osti_1423436,
title = {Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials},
author = {Ren, Zhifeng and Zhang, Qian and Chen, Gang},
abstractNote = {A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {2}
}

Works referenced in this record:

Thermoelectric Figure of Merit Enhancement by Modification of the Electronic Density of States
patent-application, July 2009


Thermoelectric Material and Thermoelectric Module and Thermoelectric Device Including the Thermoelectric Material
patent-application, October 2011


Self-Tuning of Carrier Concentration for High Thermoelectric Performance
patent-application, April 2012


Anomalous Thermoelectric Power as Evidence for Two-Valence Bands in SnTe
journal, July 1963