Front and backside processed thin film electronic devices
Abstract
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
- Inventors:
-
- Madison, WI
- Middleton, WI
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1016132
- Patent Number(s):
- 7812353
- Application Number:
- 12/042,066
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-03ER46028
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Front and backside processed thin film electronic devices. United States: N. p., 2010.
Web.
Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, & Ma, Zhenqiang. Front and backside processed thin film electronic devices. United States.
Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Tue .
"Front and backside processed thin film electronic devices". United States. https://www.osti.gov/servlets/purl/1016132.
@article{osti_1016132,
title = {Front and backside processed thin film electronic devices},
author = {Yuan, Hao-Chih and Wang, Guogong and Eriksson, Mark A and Evans, Paul G and Lagally, Max G and Ma, Zhenqiang},
abstractNote = {This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 12 00:00:00 EDT 2010},
month = {Tue Oct 12 00:00:00 EDT 2010}
}
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