DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Front and backside processed thin film electronic devices

Abstract

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Inventors:
 [1];  [1];  [1];  [1];  [1];  [2]
  1. Madison, WI
  2. Middleton, WI
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1016132
Patent Number(s):
7812353
Application Number:
12/042,066
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Front and backside processed thin film electronic devices. United States: N. p., 2010. Web.
Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, & Ma, Zhenqiang. Front and backside processed thin film electronic devices. United States.
Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Tue . "Front and backside processed thin film electronic devices". United States. https://www.osti.gov/servlets/purl/1016132.
@article{osti_1016132,
title = {Front and backside processed thin film electronic devices},
author = {Yuan, Hao-Chih and Wang, Guogong and Eriksson, Mark A and Evans, Paul G and Lagally, Max G and Ma, Zhenqiang},
abstractNote = {This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {10}
}

Works referenced in this record:

Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination
journal, July 2002


Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates
journal, August 2005


Design and measurements of test element group wafer thinned to 10 μm for 3D system in package
conference, January 2004


Frontiers of silicon-on-insulator
journal, May 2003


Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
journal, March 2005


Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks
journal, August 2004


Bendable single crystal silicon thin film transistors formed by printing on plastic substrates
journal, February 2005


A printable form of silicon for high performance thin film transistors on plastic substrates
journal, June 2004