Front and backside processed thin film electronic devices
Abstract
This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
- Inventors:
-
- Madison, WI
- Middleton, WI
- Lakewood, CO
- Issue Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1035053
- Patent Number(s):
- 8089073
- Application Number:
- US patent applicaiton 12/877,269
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-03ER46028
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Evans, Paul G, Lagally, Max G, Ma, Zhenqiang, Yuan, Hao-Chih, Wang, Guogong, and Eriksson, Mark A. Front and backside processed thin film electronic devices. United States: N. p., 2012.
Web.
Evans, Paul G, Lagally, Max G, Ma, Zhenqiang, Yuan, Hao-Chih, Wang, Guogong, & Eriksson, Mark A. Front and backside processed thin film electronic devices. United States.
Evans, Paul G, Lagally, Max G, Ma, Zhenqiang, Yuan, Hao-Chih, Wang, Guogong, and Eriksson, Mark A. Tue .
"Front and backside processed thin film electronic devices". United States. https://www.osti.gov/servlets/purl/1035053.
@article{osti_1035053,
title = {Front and backside processed thin film electronic devices},
author = {Evans, Paul G and Lagally, Max G and Ma, Zhenqiang and Yuan, Hao-Chih and Wang, Guogong and Eriksson, Mark A},
abstractNote = {This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {1}
}
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