Observation of K{sub 2}SiF{sub 6} crystal growth during Secco etching of polycrystalline silicon
Journal Article
·
· Journal of the Electrochemical Society
- Univ. of New South Wales, Sydney (Australia). Centre for Photovoltaic Devices and Systems
Crystallization of K{sub 2}SiF{sub 6} has been observed during Secco etching of polycrystalline silicon wafer and thin films deposited on rough silica substrates. The crystals grew along grain boundaries and rough edges of the substrates, and were analyzed quantitatively by secondary ion mass spectrometry, electronic microprobe, and X-ray diffraction. It is suggested that a low nucleation barrier of the rough surface stimulates the crystal growth.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 99622
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 7 Vol. 142; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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