Reactive ion etching of silicon carbide in SF{sub 6} gas: Detection of CF, CF{sub 2}, and SiF{sub 2} etch products

Journal Article · Mon Aug 13 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1395520· OSTI ID:40230746

Chabert, P; Cunge, G; Booth, J -P; Perrin, J

We have detected by laser-induced fluorescence the radicals SiF{sub 2}, CF, and CF{sub 2} produced during the reactive ion etching of SiC substrates in a pure SF{sub 6} plasma. Spatially and temporally resolved measurements were used to distinguish between gas phase and etched surface radical production. Whereas CF and CF{sub 2} are produced directly at the etched surface, the SiF{sub 2} radicals are produced in the gas phase (probably by electron-impact dissociation of SiF{sub 4}). We attribute this difference to the formation of a carbon-rich layer on the SiC substrate surface, the removal of which produces CF{sub x} (x=1,2,3) radicals. The CF{sub 2} radical represents up to 20% of the total carbon etch products under our conditions. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40230746
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARBON
DETECTION
DISSOCIATION
ETCHING
FLUORESCENCE
PHYSICS
PRODUCTION
RADICALS
REMOVAL
SILICON CARBIDES
SUBSTRATES