Synchrotron white beam topography studies of screw dislocations in 6H-SiC single crystals

Book · Fri Sep 01 00:00:00 EDT 1995

OSTI ID:99508

Wang, S; Dudley, M ^[1]; Carter, Jr, C H; Tsvetkov, V F ^[2]; Fazi, C ^[3]

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1. State Univ. of New York, Stony Brook, NY (United States). Dept. of Materials Science and Engineering
2. Cree Research, Inc., Durham, NC (United States)
3. Army Research Lab., Adelphi, MD (United States)

Synchrotron white beam X-ray topography, along with optical microscopy and scanning electron microscopy, has been used to characterize structural defects which are potentially detrimental to device performance in PVT 6H-SiC single crystals. Line defects running along the [0001] axis, known as ``micropipes``, were studied extensively. Detailed analysis of topographic image contrast associated with ``micropipes``, based on the kinematical theory of X-ray diffraction, established that the so-called ``micropipes`` are screw dislocations with large Burgers vectors.

• OSTI ID: 99508
• Report Number(s): CONF-941144--; ISBN 1-55899-277-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
MONOCRYSTALS
SCREW DISLOCATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON CARBIDES