Room temperature damage, annealing, and dislocation growth in silicon
- Australian National Univ., Canberra (Australia)
The concentration of residual defects produced by self ion implantation of silicon has been shown to be a sensitive function of implantation temperature at temperatures near room temperature. In this study samples were heated to temperatures of 20 C and 60 C and implanted with 540 keV Si ions to a fluence of 2 {times} 10{sup 15}Si{center_dot}cm{sup {minus}2} using a constant scanned ion flux of 0.2 {micro}A{center_dot}cm{sup {minus}2}. The resultant primary defect concentrations, measured by Rutherford backscattering spectrometry and channeling (RBS-C), were 2.3 {+-} 0.1 {times} 10{sup 22} cm{sup {minus}3} and 1.8 {+-} 0.2 {times} 10{sup 21} cm{sup {minus}3}, respectively, i.e. a reduction by a factor of {approximately}13 for a temperature increase of 40 C. Such differences were not evident in the concentration of secondary defects formed by annealing these samples at 900 C for 15 minutes: the defect concentrations were equal within the experimental uncertainties of the RBS-C and transmission electron microscopy (TEM) measurements. This result appears to lead to the surprising conclusion that the number of displaced atoms that survive high temperature annealing to form extended defects is largely independent of the dynamic annealing processes operating during implantation but depends instead on parameters which scale with the ion fluence.
- OSTI ID:
- 99466
- Report Number(s):
- CONF-941144--; ISBN 1-55899-275-8
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defects in silicon after B{sup +} implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy
Room-temperature annealing of Si implantation damage in InP