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Title: Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

Abstract

Irradiation induced amorphization in nanocrystalline and single crystal 3C-SiC has been studied using 1 MeV Si+ ions under identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in-situ ion channeling and ex-situ x-ray diffraction methods. The results show that, compared to single crystal 3C-SiC, full amorphization of small 3C-SiC grains (~3.8 nm in size) at room temperature occurs at a slightly lower dose. Grain size decreases with increasing dose until a fully amorphized state is attained. The amorphization dose increases at 400 K relative to room temperature. However, at 400 K, the dose for amorphization for 2.0 nm grains is about a factor of 4 and 8 smaller than for 3.0 nm grains and bulk single crystal 3C-SiC, respectively. The behavior is attributed to the dominance of defect-stimulated interfacial amorphization.

Authors:
 [1];  [2];  [1];  [3]
  1. Pacific Northwest National Laboratory (PNNL)
  2. Texas A&M University
  3. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
993453
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 25; Journal Issue: 12; Journal ID: ISSN 0884-2914
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAIN SIZE; ION CHANNELING; IRRADIATION; MONOCRYSTALS; X-RAY DIFFRACTION

Citation Formats

Jiang, Weilin, Wang, H., Zhang, Yanwen, and Weber, William J. Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions. United States: N. p., 2010. Web. doi:10.1557/jmr.2010.0311.
Jiang, Weilin, Wang, H., Zhang, Yanwen, & Weber, William J. Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions. United States. doi:10.1557/jmr.2010.0311.
Jiang, Weilin, Wang, H., Zhang, Yanwen, and Weber, William J. Fri . "Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions". United States. doi:10.1557/jmr.2010.0311.
@article{osti_993453,
title = {Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions},
author = {Jiang, Weilin and Wang, H. and Zhang, Yanwen and Weber, William J},
abstractNote = {Irradiation induced amorphization in nanocrystalline and single crystal 3C-SiC has been studied using 1 MeV Si+ ions under identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in-situ ion channeling and ex-situ x-ray diffraction methods. The results show that, compared to single crystal 3C-SiC, full amorphization of small 3C-SiC grains (~3.8 nm in size) at room temperature occurs at a slightly lower dose. Grain size decreases with increasing dose until a fully amorphized state is attained. The amorphization dose increases at 400 K relative to room temperature. However, at 400 K, the dose for amorphization for 2.0 nm grains is about a factor of 4 and 8 smaller than for 3.0 nm grains and bulk single crystal 3C-SiC, respectively. The behavior is attributed to the dominance of defect-stimulated interfacial amorphization.},
doi = {10.1557/jmr.2010.0311},
journal = {Journal of Materials Research},
issn = {0884-2914},
number = 12,
volume = 25,
place = {United States},
year = {2010},
month = {1}
}