Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

Journal Article · Tue Nov 23 04:00:00 EST 2010 · Journal of Materials Research, 25(12):2341-2348

DOI:https://doi.org/10.1557/JMR.2010.0311· OSTI ID:994026

Jiang, Weilin; Wang, Haiyan; Kim, Ickchan; Zhang, Yanwen; Weber, William J

Irradiation induced amorphization in nanocrystalline and single crystal 3C-SiC has been studied using 1 MeV Si+ ions under the identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in-situ ion channeling and ex-situ x-ray diffraction methods. The results show that, compared to single crystal 3C-SiC, full amorphization of small 3C-SiC grains (~3.8 nm in size) occurs at a slightly lower dose at room temperature. For grains with sizes of 3.0 - 3.8 nm, the amorphization dose is lower at room temperature than 400 K. A significantly lower dose for amorphization of smaller grains (2.0 nm in size) is observed at 400 K. The behavior has been interpreted based on the competition between the interface and interior amorphization.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 994026
• Report Number(s): PNNL-SA-72235; 34899; 44713; KC0201020
• Journal Information: Journal of Materials Research, 25(12):2341-2348, Journal Name: Journal of Materials Research, 25(12):2341-2348
• Country of Publication: United States
• Language: English

Related Subjects

Environmental Molecular Sciences Laboratory
Irradiation effects
amorphization
nanocrystals
silicon carbide