Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Zhang, Limin; Jiang, Weilin; Pan, Chenglong; Fadanelli Filho, Raul Carlos; Ai, Wensi; Chen, Liang; Wang, Tieshan

doi:10.1002/jrs.5631

Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Journal Article · Fri Aug 30 04:00:00 EDT 2019 · Journal of Raman Spectroscopy

DOI:https://doi.org/10.1002/jrs.5631· OSTI ID:1572470

Zhang, Limin ^[1]; ^[2]; Pan, Chenglong ^[1]; Fadanelli Filho, Raul Carlos ^[3]; Ai, Wensi ^[1]; Chen, Liang ^[1]; Wang, Tieshan ^[4]

Lanzhou University
BATTELLE (PACIFIC NW LAB)
Universidade Fedderal do
VISITORS

This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1572470

Report Number(s):: PNNL-SA-139648

Journal Information:: Journal of Raman Spectroscopy, Journal Name: Journal of Raman Spectroscopy Journal Issue: 8 Vol. 50

Country of Publication:: United States

Language:: English

References (36)

Chemical bonding analysis of a-SiC : H films by Raman spectroscopy Chehaidar, A.; Carles, R.; Zwick, A. Journal of Non-Crystalline Solids, Vol. 169, Issue 1-2 https://doi.org/10.1016/0022-3093(94)90222-4	journal	March 1994
Atomistic study of intrinsic defect migration in 3C-SiC Gao, Fei; Weber, William J.; Posselt, M. Physical Review B, Vol. 69, Issue 24 https://doi.org/10.1103/PhysRevB.69.245205	journal	June 2004
Dose rate dependence of damage clustering during heavy ion irradiation in Si Holland, O. W.; Fathy, D.; Narayan, J. Radiation Effects, Vol. 90, Issue 1-2 https://doi.org/10.1080/00337578508222524	journal	January 1985
Phonon Confinement in SiC Nanocrystals: Comparison of the Size Determination Using Transmission Electron Microscopy and Raman Spectroscopy Havel, M.; Baron, D.; Mazerolles, L. Applied Spectroscopy, Vol. 61, Issue 8 https://doi.org/10.1366/000370207781540187	journal	August 2007
Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa Journal of Nuclear Materials, Vol. 465 https://doi.org/10.1016/j.jnucmat.2015.06.036	journal	October 2015
Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide Benyagoub, A.; Audren, A. Journal of Applied Physics, Vol. 106, Issue 8 https://doi.org/10.1063/1.3236627	journal	October 2009
An ab initio study of the structure–strength correlation in impact damaged SiC grain boundaries Han, You Sung; Tomar, Vikas Computational Materials Science, Vol. 82 https://doi.org/10.1016/j.commatsci.2013.10.008	journal	February 2014
Optical and structural properties of polycrystalline 3C-SiC films Haddad-Adel, A.; Inokuma, T.; Kurata, Y. Applied Physics Letters, Vol. 89, Issue 18 https://doi.org/10.1063/1.2360923	journal	October 2006
Role of recombination kinetics and grain size in radiation-induced amorphization Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela Physical Review B, Vol. 86, Issue 21 https://doi.org/10.1103/PhysRevB.86.214110	journal	December 2012
Dose dependence of formation of nanoscale cavities in helium-implanted 4H–SiC Zhang, C. H.; Donnelly, S. E.; Vishnyakov, V. M. Journal of Applied Physics, Vol. 94, Issue 9 https://doi.org/10.1063/1.1611630	journal	November 2003
Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si Feng, Z. C.; Mascarenhas, A. J.; Choyke, W. J. Journal of Applied Physics, Vol. 64, Issue 6 https://doi.org/10.1063/1.341533	journal	September 1988
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation Jamison, Laura; Zheng, Ming-Jie; Shannon, Steve Journal of Nuclear Materials, Vol. 445, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2013.11.010	journal	February 2014
Effect of defects on optical phonon Raman spectra in SiC nanorods Zhang, Shu-Lin; Zhu, Bang-Fen; Huang, Fuming Solid State Communications, Vol. 111, Issue 11 https://doi.org/10.1016/S0038-1098(99)00262-8	journal	August 1999
Nanoscale engineering of radiation tolerant silicon carbide Zhang, Yanwen; Ishimaru, Manabu; Varga, Tamas Physical Chemistry Chemical Physics, Vol. 14, Issue 38 https://doi.org/10.1039/c2cp42342a	journal	January 2012
Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001) Talwar, Devki N. Diamond and Related Materials, Vol. 52 https://doi.org/10.1016/j.diamond.2014.11.011	journal	February 2015
Origin of radiation tolerance in 3C-SiC with nanolayered planar defects Ishimaru, Manabu; Zhang, Yanwen; Shannon, Steven Applied Physics Letters, Vol. 103, Issue 3 https://doi.org/10.1063/1.4813593	journal	July 2013
Damage buildup in GaN under ion bombardment Kucheyev, S. O.; Williams, J. S.; Jagadish, C. Physical Review B, Vol. 62, Issue 11 https://doi.org/10.1103/PhysRevB.62.7510	journal	September 2000
Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD Chaâbane, N.; Debelle, A.; Sattonnay, G. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 286 https://doi.org/10.1016/j.nimb.2011.11.018	journal	September 2012
Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC Jiang, W.; Weber, W. J.; Thevuthasan, S. Surface and Interface Analysis, Vol. 27, Issue 4 https://doi.org/10.1002/(SICI)1096-9918(199904)27:4<179::AID-SIA459>3.0.CO;2-1	journal	April 1999
Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures Zhang, Limin; Jiang, Weilin; Ai, Wensi Journal of the American Ceramic Society, Vol. 102, Issue 1 https://doi.org/10.1111/jace.15895	journal	July 2018
Effects of grain size and grain boundaries on defect production in nanocrystalline 3C–SiC Swaminathan, N.; Kamenski, Paul J.; Morgan, Dane Acta Materialia, Vol. 58, Issue 8 https://doi.org/10.1016/j.actamat.2010.01.009	journal	May 2010
FTIR study of silicon carbide amorphization by heavy ion irradiations Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier Journal of Physics D: Applied Physics, Vol. 50, Issue 9 https://doi.org/10.1088/1361-6463/aa5614	journal	February 2017
Role of interfaces in damage process of irradiated lithium aluminate nanocrystals Setyawan, Wahyu; Senor, David J.; Devanathan, Ram Journal of the American Ceramic Society https://doi.org/10.1111/jace.16051	journal	September 2018
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide Jamison, Laura; Sridharan, Kumar; Shannon, Steve Journal of Materials Research, Vol. 29, Issue 23 https://doi.org/10.1557/jmr.2014.340	journal	December 2014
Amorphization of nanocrystalline 3C-SiC irradiated with Si ⁺ ions Jiang, W.; Wang, H.; Kim, I. Journal of Materials Research, Vol. 25, Issue 12 https://doi.org/10.1557/jmr.2010.0311	journal	December 2010
Raman spectroscopy study of heavy-ion-irradiated α-SiC Sorieul, S.; Costantini, J-M; Gosmain, L. Journal of Physics: Condensed Matter, Vol. 18, Issue 22 https://doi.org/10.1088/0953-8984/18/22/022	journal	May 2006
Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide Jiang, Weilin; Jiao, Liang; Wang, Haiyan Journal of the American Ceramic Society, Vol. 94, Issue 12 https://doi.org/10.1111/j.1551-2916.2011.04887.x	journal	October 2011
Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC Li, B. S.; Du, Y. Y.; Wang, Z. G. Vacuum, Vol. 113 https://doi.org/10.1016/j.vacuum.2014.12.017	journal	March 2015
Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions: Monitoring of the damage of energetic ions Miro, Sandrine; Velisa, Gihan; Thomé, Lionel Journal of Raman Spectroscopy, Vol. 45, Issue 6 https://doi.org/10.1002/jrs.4482	journal	May 2014
Energy dissipation and defect generation in nanocrystalline silicon carbide Gao, F.; Chen, D.; Hu, Wangyu Physical Review B, Vol. 81, Issue 18 https://doi.org/10.1103/PhysRevB.81.184101	journal	May 2010
Raman Spectroscopy of nanomaterials: How spectra relate to disorder, particle size and mechanical properties Gouadec, Gwénaël; Colomban, Philippe Progress in Crystal Growth and Characterization of Materials, Vol. 53, Issue 1 https://doi.org/10.1016/j.pcrysgrow.2007.01.001	journal	March 2007
In-cascade ionization effects on defect production in 3C silicon carbide Xue, Haizhou; Zhang, Yanwen; Weber, William J. Materials Research Letters, Vol. 5, Issue 7 https://doi.org/10.1080/21663831.2017.1334241	journal	June 2017
Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths Sridhara, S. G.; Eperjesi, T. J.; Devaty, R. P. Materials Science and Engineering: B, Vol. 61-62 https://doi.org/10.1016/S0921-5107(98)00508-X	journal	July 1999
Rayleigh and Raman images of the bulk/surface nanostructure of SiC based fibres Havel, M.; Colomban, Ph. Composites Part B: Engineering, Vol. 35, Issue 2 https://doi.org/10.1016/S1359-8368(03)00086-6	journal	March 2004
An ab-initio analysis of the influence of knock-on atom induced damage on the peak tensile strength of 3C-SiC grain boundaries Han, You Sung; Tomar, Vikas International Journal of Damage Mechanics, Vol. 24, Issue 3 https://doi.org/10.1177/1056789514540315	journal	April 2014
Response of nanocrystalline 3 C silicon carbide to heavy-ion irradiation Jiang, W.; Wang, H.; Kim, I. Physical Review B, Vol. 80, Issue 16 https://doi.org/10.1103/PhysRevB.80.161301	journal	October 2009

Similar Records

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C ⁺ and He ⁺ ions

Journal Article · Tue May 28 20:00:00 EDT 2019 · Journal of Raman Spectroscopy · OSTI ID:1523304

Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

Journal Article · Wed Nov 30 23:00:00 EST 2011 · Journal of the American Ceramic Society, 94(12):4127–4130 · OSTI ID:1032405

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Journal Article · Thu Apr 15 00:00:00 EDT 2021 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms · OSTI ID:1770124

Related Subjects

Amorphization
Ion irradiation
Silicon carbide
Nanocrystalline ceramics
Nuclear materials

Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Citation Formats

References (36)

Similar Records

Related Subjects