Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Zhang, Limin; Jiang, Weilin; Pan, Chenglong; Fadanelli Filho, Raul Carlos; Ai, Wensi; Chen, Liang; Wang, Tieshan

doi:10.1002/jrs.5631

Title: Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

Journal Article · Fri Aug 30 00:00:00 EDT 2019 · Journal of Raman Spectroscopy

DOI:https://doi.org/10.1002/jrs.5631· OSTI ID:1572470

Zhang, Limin ^[1];

^[2]; Pan, Chenglong ^[1]; Fadanelli Filho, Raul Carlos ^[3]; Ai, Wensi ^[1]; Chen, Liang ^[1]; Wang, Tieshan ^[4]

Lanzhou University
BATTELLE (PACIFIC NW LAB)
Universidade Fedderal do
VISITORS

This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

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Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1572470

Report Number(s):: PNNL-SA-139648

Journal Information:: Journal of Raman Spectroscopy, Vol. 50, Issue 8

Country of Publication:: United States

Language:: English

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