Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C + and He + ions

Zhang, Limin; Jiang, Weilin; Pan, Chenglong; Fadanelli, Raul C.; Ai, Wensi; Chen, Liang; Wang, Tieshan

doi:10.1002/jrs.5631

Title: Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C ⁺ and He ⁺ ions

Journal Article · Wed May 29 00:00:00 EDT 2019 · Journal of Raman Spectroscopy

DOI:https://doi.org/10.1002/jrs.5631· OSTI ID:1523304

^[1]; Jiang, Weilin ^[2]; Pan, Chenglong ^[1]; Fadanelli, Raul C. ^[3]; Ai, Wensi ^[1]; Chen, Liang ^[1]; Wang, Tieshan ^[1]

School of Nuclear Science and Technology Lanzhou University Lanzhou Gansu China, Engineering Research Center for Neutron Application Technology, Ministry of Education Lanzhou University Lanzhou Gansu China
Energy and Environment Directorate Pacific Northwest National Laboratory Richland Washington
Laboratório de Implantação Iônica, Instituto de Fίsica Universidade Federal do Rio Grande do Sul Porto Alegre Brazil

Abstract This study examines C ⁺ and He ⁺ ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C ⁺ and He ⁺ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC05‐76RL01830

OSTI ID:: 1523304

Journal Information:: Journal of Raman Spectroscopy, Journal Name: Journal of Raman Spectroscopy Vol. 50 Journal Issue: 8; ISSN 0377-0486

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Netherlands

Language:: English

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Cited by: 15 works

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