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Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

Journal Article · · Journal of the American Ceramic Society, 94(12):4127–4130
Response to irradiation of nanocrystalline 3C-SiC is studied using 2 MeV Au+ ions near the critical temperature for amorphization and is compared to the behavior of its monocrystalline counterpart under the identical irradiation conditions. The irradiated samples have been characterized using in-situ ion channeling, ex-situ x-ray diffraction, and helium ion microscopy. Compared to monocrystalline 3C-SiC, a faster amorphization process in the nanocrystalline material (average grain size = 3.3 nm) is observed at 500 K. However, the nanograin grows with increasing ion fluence at 550 K and the grain size tends to saturate at high fluences. The striking contrast demonstrates a sharp transition from irradiation-induced interface-driven amorphization at 500 K to crystallization at 550 K. The results could show potential impacts of nanocrystalline SiC on nuclear fuel cladding and structural components of next-generation nuclear energy systems.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1032405
Report Number(s):
PNNL-SA-82117; 44713; KC0201020
Journal Information:
Journal of the American Ceramic Society, 94(12):4127–4130, Journal Name: Journal of the American Ceramic Society, 94(12):4127–4130 Journal Issue: 12 Vol. 94; ISSN 0002-7820; ISSN JACTAW
Country of Publication:
United States
Language:
English