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Title: Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Patent ·
OSTI ID:993133
 [1];  [1];  [1]
  1. Albuquerque, NM
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A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,745,315
Application Number:
11/866,684
OSTI ID:
993133
Country of Publication:
United States
Language:
English

References (5)

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors journal July 2006
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition journal November 2006
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections journal August 2003
Crystallographic alignment of high-density gallium nitride nanowire arrays journal July 2004
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices journal March 2003

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