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Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

Journal Article · · Langmuir
DOI:https://doi.org/10.1021/la904840q· OSTI ID:986871

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
Materials Sciences Division
DOE Contract Number:
AC02-05CH11231
OSTI ID:
986871
Report Number(s):
LBNL-3865E
Journal Information:
Langmuir, Journal Name: Langmuir; ISSN LANGD5; ISSN 0743-7463
Country of Publication:
United States
Language:
English