Impact of Crystallographic Orientation Disorders on Electronic Heterogeneities in Metal Halide Perovskite Thin Films
- Univ. of Virginia, Charlottesville, VA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Metal halide perovskite thin films have achieved remarkable performance in optoelectronic devices. To achieve higher device performance and reliability needed for wide-spread commercial deployment, spatial heterogeneity of optoelectronic properties in the perovskite thin films needs to be understood and controlled. However, clear identification of the causes underlying the heterogeneity has remained elusive. In this work, we employ a multimodal imaging approach to separate electronic heterogeneity from morphology variations in perovskite thin films. Our results reveal that disorders in the crystallographic orientation of grains and different surface terminations are the primary cause of the electronic heterogeneity. Therefore, a solution processed polycrystalline perovskite thin film with a negligible spatial variation in charge trap site density reaching that of single crystals can be achieved by minimizing crystallographic orientation disorder.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division
- Grant/Contract Number:
- AC05-00OR22725; SC0016144
- OSTI ID:
- 1784202
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 10 Vol. 18; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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