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Title: Method for producing high carrier concentration p-Type transparent conducting oxides

Abstract

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. Evergreen, CO
  2. Littleton, CO
  3. Golden, CO
  4. Conifer, CO
  5. Westminster, CO
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
986579
Patent Number(s):
7,517,784
Application Number:
10/553,245; TRN: US201018%%45
Assignee:
Alliance For Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; P-TYPE CONDUCTORS; FABRICATION; OPACITY; DEPOSITION; OXIDES; OXIDIZERS; NITRIC OXIDE; DECOMPOSITION

Citation Formats

Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, and Dehart, Clay M. Method for producing high carrier concentration p-Type transparent conducting oxides. United States: N. p., 2009. Web.
Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, & Dehart, Clay M. Method for producing high carrier concentration p-Type transparent conducting oxides. United States.
Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, and Dehart, Clay M. Tue . "Method for producing high carrier concentration p-Type transparent conducting oxides". United States. https://www.osti.gov/servlets/purl/986579.
@article{osti_986579,
title = {Method for producing high carrier concentration p-Type transparent conducting oxides},
author = {Li, Xiaonan and Yan, Yanfa and Coutts, Timothy J and Gessert, Timothy A and Dehart, Clay M},
abstractNote = {A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {4}
}

Patent:

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