Method for producing high carrier concentration p-Type transparent conducting oxides
Abstract
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
- Inventors:
-
- Evergreen, CO
- Littleton, CO
- Golden, CO
- Conifer, CO
- Westminster, CO
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 986579
- Patent Number(s):
- 7,517,784
- Application Number:
- 10/553,245; TRN: US201018%%45
- Assignee:
- Alliance For Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; P-TYPE CONDUCTORS; FABRICATION; OPACITY; DEPOSITION; OXIDES; OXIDIZERS; NITRIC OXIDE; DECOMPOSITION
Citation Formats
Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, and Dehart, Clay M. Method for producing high carrier concentration p-Type transparent conducting oxides. United States: N. p., 2009.
Web.
Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, & Dehart, Clay M. Method for producing high carrier concentration p-Type transparent conducting oxides. United States.
Li, Xiaonan, Yan, Yanfa, Coutts, Timothy J, Gessert, Timothy A, and Dehart, Clay M. 2009.
"Method for producing high carrier concentration p-Type transparent conducting oxides". United States. https://www.osti.gov/servlets/purl/986579.
@article{osti_986579,
title = {Method for producing high carrier concentration p-Type transparent conducting oxides},
author = {Li, Xiaonan and Yan, Yanfa and Coutts, Timothy J and Gessert, Timothy A and Dehart, Clay M},
abstractNote = {A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.},
doi = {},
url = {https://www.osti.gov/biblio/986579},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 14 00:00:00 EDT 2009},
month = {Tue Apr 14 00:00:00 EDT 2009}
}
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