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Method for producing high carrier concentration p-Type transparent conducting oxides

Patent ·
OSTI ID:986579
 [1];  [2];  [3];  [4];  [5]
  1. Evergreen, CO
  2. Littleton, CO
  3. Golden, CO
  4. Conifer, CO
  5. Westminster, CO
+ Show Author Affiliations

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Alliance For Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
7,517,784
Application Number:
10/553,245
OSTI ID:
986579
Country of Publication:
United States
Language:
English

References (6)

Control of Doping by Impurity Chemical Potentials: Predictions for p -Type ZnO journal June 2001
p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping journal November 1999
Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source journal February 2001
Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition journal November 1997
A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds journal March 1998
Preparation and some properties of nitrogen-mixed ZnO thin films journal August 1996

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Related Subjects

36 MATERIALS SCIENCE
DECOMPOSITION
DEPOSITION
FABRICATION
NITRIC OXIDE
OPACITY
OXIDES
OXIDIZERS
P-TYPE CONDUCTORS