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Title: High carrier concentration p-type transparent conducting oxide films

Patent ·
OSTI ID:1175399
;

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Instittue (Kansas City, MO)
Patent Number(s):
6,908,782
Application Number:
10/344,446
OSTI ID:
1175399
Country of Publication:
United States
Language:
English

References (16)

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A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds journal March 1998
Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells journal May 1991
Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition journal November 1997
Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source journal February 2001
Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics journal January 1996
Control of Doping by Impurity Chemical Potentials: Predictions for p -Type ZnO journal June 2001
Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation journal April 1989
Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors journal January 1994
p ‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth journal November 1990
p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping journal November 1999
Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” in n -Type III-V Semiconductors journal February 2000
Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE journal February 2000
First-principles study of native point defects in ZnO journal June 2000
Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering journal October 1985
Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO journal July 1983

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36 MATERIALS SCIENCE