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Title: Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

Patent ·
OSTI ID:986103

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-99ER45777
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
7,450,352
Application Number:
11/169,320; TRN: US201017%%23
OSTI ID:
986103
Country of Publication:
United States
Language:
English

References (22)

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Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation journal May 2003
Metal-Oxide Interfaces in Magnetic Tunnel Junctions journal January 2004
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Delocalization and charge disproportionation in La ( 1 x ) Sr x MnO 3 journal February 2004
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High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions journal June 2003
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