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Methods for the fabrication of thermally stable magnetic tunnel junctions

Patent ·
OSTI ID:1013638
Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.
Research Organization:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-99ER45777
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
7,579,042
Application Number:
10/902,281
OSTI ID:
1013638
Country of Publication:
United States
Language:
English

References (12)

An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation journal March 2001
Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminium journal February 2001
Epitaxy, magnetic and tunnel properties of transition metal/MgO(001) heterostructures journal June 2003
Delocalization and charge disproportionation in La ( 1 − x ) Sr x MnO 3 journal February 2004
Metal-Oxide Interfaces in Magnetic Tunnel Junctions journal January 2004
Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions journal May 2001
Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures journal June 1997
Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation journal May 2003
Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates journal March 2002
Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes journal June 2003
On the use of exchange biased top electrodes in magnetic tunnel junctions journal April 2004
Observation of the barrier structure in magnetic tunnel junctions using high-resolution electron microscopy and electron holography journal December 2003

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