Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

Wang, Weigang; Newhouse-Illige, Ty

Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

Patent · Tue Oct 31 04:00:00 EDT 2023

OSTI ID:2293803

Wang, Weigang; Newhouse-Illige, Ty

Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Arizona, Tucson, AZ (United States)

Sponsoring Organization:: USDOE; National Science Foundation (NSF); Defense Advanced Research Projects Agency (DARPA)

DOE Contract Number:: AC02-06CH11357

Assignee:: Arizona Board of Regents on Behalf of the University of Arizona (Tucson, AZ)

Patent Number(s):: 11,805,703

Application Number:: 15/720,399

OSTI ID:: 2293803

Country of Publication:: United States

Language:: English

References (8)

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Electric-field tunable magnetic-field-sensor based on CoFeB/MgO magnetic tunnel junction Naik, V. B.; Meng, H.; Liu, R. S. Applied Physics Letters, Vol. 104, Issue 23 https://doi.org/10.1063/1.4882178	journal	June 2014
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