Large Tunneling Magnetoresistance in GaMnAs/ AlAs/ GaMnAs Ferromagnetic Semiconductor Tunnel Junctions

Journal Article · Mon Jul 09 04:00:00 EDT 2001 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.87.026602· OSTI ID:40277017

Tanaka, M; Higo, Y

We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga{sub 1-x}Mn {sub x}As/AlAs /Ga{sub 1-x} Mn{sub x}As ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% (maximum 75%) were obtained in junctions with a very thin ({<=}1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing barrier thickness, which is explained by calculations assuming that the parallel wave vector of carriers is conserved in tunneling.

• Sponsoring Organization: (US)
• OSTI ID: 40277017
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 2 Vol. 87; ISSN 0031-9007
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
MAGNETIC FIELDS
MAGNETORESISTANCE
THICKNESS
TUNNELING
VECTORS