Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions

Journal Article · Sun May 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1846591· OSTI ID:20709705

Saito, H; Yuasa, S; Ando, K ^[1]

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1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568 (Japan)

Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr{sub 1-{delta}}Te) and semiconductor (Ga{sub 1-x}Mn{sub x}As) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5% at 5 K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr{sub 1-{delta}}Te is applicable to the spintronic devices based on III-V semiconductors.

• OSTI ID: 20709705
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHARGED-PARTICLE TRANSPORT
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRIC POTENTIAL
ELECTRODES
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUPERCONDUCTING JUNCTIONS
TELLURIUM COMPOUNDS
TEMPERATURE RANGE 0000-0013 K
TUNNEL EFFECT