Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions
Journal Article
·
· Journal of Applied Physics
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568 (Japan)
Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr{sub 1-{delta}}Te) and semiconductor (Ga{sub 1-x}Mn{sub x}As) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5% at 5 K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr{sub 1-{delta}}Te is applicable to the spintronic devices based on III-V semiconductors.
- OSTI ID:
- 20709705
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 10; Conference: 49. annual conference on magnetism and magnetic materials, Jacksonville, FL (United States), 7-11 Nov 2004; Other Information: DOI: 10.1063/1.1846591; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHARGED-PARTICLE TRANSPORT
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRIC POTENTIAL
ELECTRODES
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUPERCONDUCTING JUNCTIONS
TELLURIUM COMPOUNDS
TEMPERATURE RANGE 0000-0013 K
TUNNEL EFFECT
ALUMINIUM ARSENIDES
CHARGED-PARTICLE TRANSPORT
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRIC POTENTIAL
ELECTRODES
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUPERCONDUCTING JUNCTIONS
TELLURIUM COMPOUNDS
TEMPERATURE RANGE 0000-0013 K
TUNNEL EFFECT