Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Althammer, Matthias; Vikam Singh, Amit; Keshavarz, Sahar; Kenan Yurtisigi, Mehmet; Mishra, Rohan; Borisevich, Albina Y.; LeClair, Patrick; Gupta, Arunava

doi:10.1063/1.4972103

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Journal Article · Fri Dec 16 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4972103· OSTI ID:1340473

Althammer, Matthias ^[1]; Vikam Singh, Amit ^[2]; Keshavarz, Sahar ^[3]; Kenan Yurtisigi, Mehmet ^[3]; Mishra, Rohan ^[4]; Borisevich, Albina Y. ^[5]; LeClair, Patrick ^[3]; Gupta, Arunava ^[2]

Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center
Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center. Dept. of Chemistry and Chemical Engineering
Univ. of Alabama, Tuscaloosa, AL (United States). MINT Center. Dept. of Physics and Astronomy
Washington Univ., St. Louis, MO (United States). Dept. of Mechanical Engineering and Materials Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Sciences and Technology Division

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La_0.67 Sr_0.33MnO₃ based magnetic tunnel junctions with a SrSnO₃ barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO₃ barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Alabama, Tuscaloosa, AL (United States)

Sponsoring Organization:: National Science Foundation (NSF) (United States); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Contributing Organization:: Bavarian Academy of Sciences and Humanities (BADW), Garching (Germany); Washington Univ., St. Louis, MO (United States)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1340473

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 120; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

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