Giant tunneling magnetoresistance in Co{sub 2}MnSi/Al-O/Co{sub 2}MnSi magnetic tunnel junctions

Journal Article · Mon May 08 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2202724· OSTI ID:20779296

Sakuraba, Y; Hattori, M; Oogane, M; Ando, Y; Kato, H; Sakuma, A; Miyazaki, T; Kubota, H ^[1]

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1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

Magnetic tunnel junctions (MTJs) with a stacking structure of Co{sub 2}MnSi/Al-O/Co{sub 2}MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co{sub 2}MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.

• OSTI ID: 20779296
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
AMORPHOUS STATE
COBALT ALLOYS
DEPOSITION
ELECTRIC POTENTIAL
ENERGY GAP
FERROMAGNETIC MATERIALS
MAGNETORESISTANCE
MANGANESE ALLOYS
SILICON ALLOYS
SPUTTERING
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TUNNEL EFFECT