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Office of Scientific and Technical Information
 

Thin Silicon MEMS Contact-Stress Sensor

Conference ·
OSTI ID:984646
; ;

This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
984646
Report Number(s):
LLNL-PROC-433955
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
ACCURACY
ACTUATORS
SILICON