Thin Silicon MEMS Contact-Stress Sensor

Conference · Mon Mar 22 04:00:00 EDT 2010

DOI:https://doi.org/10.31438/trf.hh2010.67· OSTI ID:1009206

Kotovsky, J; Tooker, A; Horsley, D

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 1009206
• Report Number(s): LLNL-PROC-427227
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ACCURACY
ACTUATORS
CALIBRATION
DIAPHRAGM
SILICON
STABILITY
THICKNESS