Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.
Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO{sub 2} and Si{sub 3}N{sub 4}. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD{sup (R)}) (2-5 nm grains) and nanocrystalline diamond (NCD) (10-100 nm grains) films exhibit one of the highest Young's modulus ({approx} 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q {ge} 10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials ({approx}10 mJ/m{sup 2}-close to van der Waals attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO{sub 2}, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 983468
- Report Number(s):
- ANL/CNM/CP-66608; TRN: US201014%%496
- Resource Relation:
- Conference: SPIE Defense, Sensing and Security 2010 (DSS 2010); Apr. 5, 2010 - Apr. 9, 2010; Orlando, FL
- Country of Publication:
- United States
- Language:
- ENGLISH
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