Synchrotron X-ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-SiC Epitaxial Layers
Electron-hole recombination activated Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H-SiC epitaxial layers using synchrotron x-ray topography. The bounding partials appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. The sign of the partial dislocations can be subsequently determined.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 980593
- Report Number(s):
- BNL-93511-2010-JA; MSFOEP; TRN: US1005521
- Journal Information:
- Materials Science Forum, Vol. 600-603; ISSN 0255-5476
- Country of Publication:
- United States
- Language:
- English
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