Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers
Electron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations have been studied in 4H- silicon carbide epitaxial layers. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are observed to cut through threading edge dislocations, leaving no trailing dislocation segments in their wake. When the Shockley partial dislocations interact with threading screw dislocations, 30 degree partial dislocation dipoles are initially deposited in their wake. These partial dislocation dipoles quickly and spontaneously snap into screw orientation whereupon they cross slip and annihilate, leaving a prismatic stacking fault on the (2{ovr 11}0) plane.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 930668
- Report Number(s):
- BNL-81165-2008-JA; APPLAB; TRN: US200901%%172
- Journal Information:
- Applied Physics Letters, Vol. 90; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of electron-hole recombination-activated partial dislocations and their behavior in 4H-SiC epitaxial layers.
In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation