In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
- Department of Applied Physics, University of Tokyo, Bunkyo-ku, 113-8656, Tokyo (Japan)
- Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)
Electron-radiation-enhanced glide of 30 Degree-Sign -Si(g) partial dislocations bringing about an expansion/shrinkage of Shockley-type stacking faults in 4H-SiC was observed in-situ by transmission electron microscopy. Geometrical kinks on 30 Degree-Sign -Si(g) partials did not migrate in the dark, indicating that the kink migration is enhanced by electron irradiation. The direction of the enhanced glide was reversible depending on the irradiation intensity, which can be interpreted in terms of a sign reversal of the driving force originating in the effective stacking fault energy variable with the irradiation intensity.
- OSTI ID:
- 22089313
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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