Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates
Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results were correlated with those of the synchrotron white beam x-ray topography. Heavily nitrogen-doped SiC shows a significantly different etching behavior in comparison with the low-doped material. This complicates identification of different types of threading defects. In particular, it is difficult to separate Threading Screw Dislocations (TSD) from Threading Edge Dislocations (TED). Depending on the level of doping and thermal history of the crystal, some of the etch pits emerging due to the 1c screw dislocations can be as large as those due to the micropipes.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 980054
- Report Number(s):
- BNL--92972-2010-JA
- Journal Information:
- Materials Science Forum, Journal Name: Materials Science Forum Vol. 600-603; ISSN MSFOEP; ISSN 0255-5476
- Country of Publication:
- United States
- Language:
- English
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