Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Hu, Shanshan; Liu, Yafei; Cheng, Qianyu; Chen, Zeyu; Tong, Xiao; Raghothamachar, Balaji; Dudley, Michael

doi:10.1016/j.jcrysgro.2023.127542

Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Journal Article · Wed Dec 20 00:00:00 EST 2023 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2023.127542· OSTI ID:2433989

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Stony Brook Univ., NY (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

Here, several 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth by PVT method are investigated by Synchrotron Monochromatic Beam X-ray Topography (SMBXT). Defect behavior across the seed/newly grown layer interface are demonstrated. Comparison of early stage grown layers to seed sample indicates generation of threading edge dislocation (TED) and threading screw dislocation (TSD)/ threading mixed dislocation (TMD) pairs at the interface while most basal plane dislocations (BPDs) are deflected into TEDs. The (0001) facet of the crystal is already formed at early stage growth at the edge of the wafer and high nitrogen incorporation in facet leads to conditions favorable for nucleation and glide of Shockley/double Shockley faults with layers of 3C-SiC deposited on facet acting as nuclei. Unique-shaped dislocations are observed at early stage growth, which are caused by deflection of TSDs/TMDs and TEDs by macrosteps near the periphery of the sample and the subsequent glide of the a components. The effect of the quality of the seed surface before growth is manifested as randomly oriented arrays of pairs of TEDs and TSDs/TMDs on the as grown surface resulting from residual surface damage from scratches.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704

OSTI ID:: 2433989

Report Number(s):: BNL--225984-2024-JAAM

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 628; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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