Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-Silicon Carbide Homo-Epitaxial Layers

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3105944· OSTI ID:980371

Zhang, N; Chen, Y; Zhang, Y; Dudley, M

A model is presented for the formation mechanism of dislocation half-loop arrays formed during the homoepitaxial growth of 4H-SiC. The reorientation during glide of originally screw oriented threading segments of basal plane dislocation (BPD) renders them susceptible to conversion into sessile threading edge dislocations (TEDs), which subsequently pin the motion of the BPD. Continued glide during further growth enables parts of the mobile BPD to escape through the surface leaving arrays of half loops comprising two TEDs and a short BPD segment with significant edge component. The faulting behavior of the arrays under UV excitation is consistent with this model.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 980371
• Report Number(s): BNL-93289-2010-JA; APPLAB; TRN: US201015%%1756
• Journal Information: Applied Physics Letters, Vol. 94; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BEHAVIOR
CARBIDES
CONVERSION
DISLOCATIONS
EDGE DISLOCATIONS
EXCITATION
FASTENERS
GROWTH
LAYERS
MOTION
NUCLEATION
SURFACES
national synchrotron light source