Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-Silicon Carbide Homo-Epitaxial Layers
A model is presented for the formation mechanism of dislocation half-loop arrays formed during the homoepitaxial growth of 4H-SiC. The reorientation during glide of originally screw oriented threading segments of basal plane dislocation (BPD) renders them susceptible to conversion into sessile threading edge dislocations (TEDs), which subsequently pin the motion of the BPD. Continued glide during further growth enables parts of the mobile BPD to escape through the surface leaving arrays of half loops comprising two TEDs and a short BPD segment with significant edge component. The faulting behavior of the arrays under UV excitation is consistent with this model.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 980371
- Report Number(s):
- BNL--93289-2010-JA
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nucleation of c-axis Screw Dislocations at Substrate Surface Damage During 4H-silicon Carbide Homo-epitaxy
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density
Journal Article
·
Thu Dec 31 23:00:00 EST 2009
· Materials Science Forum
·
OSTI ID:1020018
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
Journal Article
·
Thu Dec 31 23:00:00 EST 2015
· MRS Advances
·
OSTI ID:1328041
Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density
Journal Article
·
Fri Dec 30 23:00:00 EST 2011
· Materials Science Forum
·
OSTI ID:1041868