Development of Enhancement Mode AlN/GaN HEMTs

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3168648· OSTI ID:979234

Chang, C. Y. ^[1]; Pearton, S. J. ^[1]; Lo, C. F. ^[1]; Kravchenko, Ivan I ^[2]; Dabiran, A. M. ^[3]; Wowchak, A. M. ^[3]; Cui, B. ^[3]; Chow, P. P. ^[3]; Ren, F. ^[1]

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1. University of Florida
2. ORNL
3. SVT Associates, Inc.

Demonstration of enhancement mode AlN/GaN high electron mobility transistor (HEMT) using oxygen plasma treatment on the gate area prior to the gate metalliation deposition was achieved. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from 3.2 to 1V depending on the oxygen plasma treatment time to convert the AlN into Al oxide. The gate current was also reduced when the threshold voltage

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 979234
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPOSITION
ELECTRON MOBILITY
OXYGEN
PLASMA
TRANSISTORS