Passivation of AlN/GaN HEMTs Using Ozone Treatment
- University of Florida
- ORNL
- SVT Associates, Inc.
Ozone treatment of AlN on AlN/GaN heterostructures produces effective surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. The ozone-passivated AlN/GaN High Electron Mobility Transistors (HEMTs) exhibited low gate leakage currents, high gate modulation voltage, and minimal drain current degradation during gate pulse measurements. With an additional oxygen plasma treatment on the gate area prior to the gate metal deposition, enhancement-mode AlN/GaN high electron mobility transistors were realized. The gate characteristics of the HEMTs treated with the ozone and oxygen plasma behaved in a manner similar to a metal oxide semiconductor diode-like gate current-voltage characteristic instead of a Schottky diode. Drain breakdown voltages of 23 and 43V for d- and e-mode HEMT were obtained, respectively. For d-mode HEMTs, there was no reduction in drain current during the gate pulse measurements at frequencies of 1 kHz, 10 kHz and 100 kHz. For the e-mode HEMT, the drain current was reduced 5% at 100 kHz.
- Research Organization:
- Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 969981
- Journal Information:
- Journal of Vacuum Science & Technology B, Journal Name: Journal of Vacuum Science & Technology B Journal Issue: 1 Vol. 28; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Normally-ON/OFF AlN/GaN High Electron Mobility Transistors
AlN/AlGaN/AlN quantum well channel HEMTs