Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer
Journal Article
·
· Technical Physics Letters
- Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl{sub 3} plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.
- OSTI ID:
- 22786465
- Journal Information:
- Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 5 Vol. 44; ISSN 1063-7850
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation
Development of Enhancement Mode AlN/GaN HEMTs
Passivation of AlN/GaN HEMTs Using Ozone Treatment
Journal Article
·
Sat Oct 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:22649679
Development of Enhancement Mode AlN/GaN HEMTs
Journal Article
·
Wed Dec 31 23:00:00 EST 2008
· Applied Physics Letters
·
OSTI ID:979234
Passivation of AlN/GaN HEMTs Using Ozone Treatment
Journal Article
·
Thu Dec 31 23:00:00 EST 2009
· Journal of Vacuum Science & Technology B
·
OSTI ID:969981