Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth.
Abstract not provided
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF; Air Force Office of Scientific Research
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 978983
- Report Number(s):
- ANL/MSD/JA-60957
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 2008 Vol. 92
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth.
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth : an approach to interfacial chemistry analysis via chemical bonding mapping.
Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers.
Journal Article
·
Mon Mar 31 00:00:00 EDT 2008
· Appl. Phys. Lett.
·
OSTI ID:927764
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth : an approach to interfacial chemistry analysis via chemical bonding mapping.
Journal Article
·
Wed Dec 31 23:00:00 EST 2008
· J. Appl. Phys.
·
OSTI ID:961720
Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers.
Journal Article
·
Sat Dec 31 23:00:00 EST 2005
· Appl. Phys. Lett.
·
OSTI ID:926982