Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth.
This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H{sub 2}/CH{sub 4} gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH{sub 4} chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces ({approx}6 nm rms) and higher growth rate ({approx}1 {micro}m/h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF; Air Force Office of Scientific Research
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 927764
- Report Number(s):
- ANL/MSD/JA-61265
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: Mar. 31, 2008 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
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