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Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1377301· OSTI ID:40277599
Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar--1%CH{sub 4} or Ar--1%CH{sub 4}--5%H{sub 2}, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2--10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H{sub 2}. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2--0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on the Si substrate when H{sub 2} is present in the plasma. For the case of UNCD growth from a plasma without addition of H{sub 2}, the initial nucleation occurs on an amorphous carbon layer about 10--15 nm thick directly grown on the Si substrate. This result indicates that hydrogen plays a critical role in determining the nucleation interface between the UNCD films and the Si substrate. The relation between diamond nuclei and Si is primarily random and occasionally epitaxial.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
Sponsoring Organization:
(US)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
40277599
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English