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Title: Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}

Abstract

Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar--1%CH{sub 4} or Ar--1%CH{sub 4}--5%H{sub 2}, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2--10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H{sub 2}. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2--0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on the Si substrate when H{sub 2} is present in the plasma. For the case of UNCD growth from a plasma without addition of H{sub 2}, the initial nucleation occurs on an amorphous carbon layer about 10--15 nm thick directly grown on the Si substrate. This result indicates that hydrogen plays a critical role in determining the nucleation interface between the UNCD films and the Si substrate. The relation between diamond nuclei and Si is primarily random and occasionally epitaxial.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
Sponsoring Org.:
(US)
OSTI Identifier:
40277599
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 1; Other Information: DOI: 10.1063/1.1377301; Othernumber: JAPIAU000090000001000118000001; 084113JAP; PBD: 1 Jul 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; MICROSTRUCTURE; PLASMA; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Jiao, S, Sumant, A, Kirk, M A, Gruen, D M, Krauss, A R, and Auciello, O. Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}. United States: N. p., 2001. Web. doi:10.1063/1.1377301.
Jiao, S, Sumant, A, Kirk, M A, Gruen, D M, Krauss, A R, & Auciello, O. Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}. United States. https://doi.org/10.1063/1.1377301
Jiao, S, Sumant, A, Kirk, M A, Gruen, D M, Krauss, A R, and Auciello, O. Sun . "Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}". United States. https://doi.org/10.1063/1.1377301.
@article{osti_40277599,
title = {Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}},
author = {Jiao, S and Sumant, A and Kirk, M A and Gruen, D M and Krauss, A R and Auciello, O},
abstractNote = {Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar--1%CH{sub 4} or Ar--1%CH{sub 4}--5%H{sub 2}, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2--10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H{sub 2}. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2--0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on the Si substrate when H{sub 2} is present in the plasma. For the case of UNCD growth from a plasma without addition of H{sub 2}, the initial nucleation occurs on an amorphous carbon layer about 10--15 nm thick directly grown on the Si substrate. This result indicates that hydrogen plays a critical role in determining the nucleation interface between the UNCD films and the Si substrate. The relation between diamond nuclei and Si is primarily random and occasionally epitaxial.},
doi = {10.1063/1.1377301},
url = {https://www.osti.gov/biblio/40277599}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 90,
place = {United States},
year = {2001},
month = {7}
}