Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides
Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490 C. Refractive index, mode propagation constant, propagation loss ({le}3 cm{sup {minus}1}) at {lambda}=1.3 and 1.55 {micro}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {micro}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9755
- Report Number(s):
- SAND99-2115J; TRN: AH200125%%38
- Journal Information:
- Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 16 Aug 1999
- Country of Publication:
- United States
- Language:
- English
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