Oxidized Al[sub x]Ga[sub 1[minus]x]As heterostructure planar waveguides

Journal Article · Mon Nov 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125236· OSTI ID:6105692

Luo, Y; Hall, D C; Kou, L ^[1]; Steingart, L; Jackson, J H ^[2]; Blum, O; Hou, H ^[3]

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1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556-5637 (United States)
2. Metricon Corporation, P.O. Box 63, Pennington, New Jersey 08534 (United States)
3. Sandia National Laboratory, P.O. Box 0603, Albuquerque, New Mexico 87185-0603 (United States)

Waveguiding by total internal reflection is demonstrated within Al[sub x]Ga[sub 1[minus]x]As semiconductor heterostructures which have been fully oxidized in water vapor at [approximately]490 hthinsp;[degree]C. Refractive index, mode propagation constant, propagation loss ([le]3 hthinsp;cm[sup [minus]1]) at [lambda][sub 0]=1.3 and 1.55 [mu]m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single-heterostructure oxide waveguide. An index contrast of [Delta]n=0.06 is observed between oxidized x=0.4 and x=0.8 Al[sub x]Ga[sub 1[minus]x]As oxide layers. Absorption loss at 1.55 [mu]m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure. [copyright] [ital 1999 American Institute of Physics.]

• OSTI ID: 6105692
• Journal Information: Applied Physics Letters, Vol. 75:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
GALLIUM ARSENIDES
HETEROJUNCTIONS
IMAGES
INFRARED SPECTRA
OPTICAL REFLECTION
OXIDATION
REFRACTIVE INDEX
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
GALLIUM COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SEMICONDUCTOR JUNCTIONS
SPECTRA
360606* - Other Materials- Physical Properties- (1992-)
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)