Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides

Luo, Y; Hall, D C; Kou, L; Steingart, L; Jackson, J H; Blum, O; Hou, H

doi:10.1063/1.125236

Title: Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides

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Abstract

Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490 C. Refractive index, mode propagation constant, propagation loss ({le}3 cm{sup {minus}1}) at {lambda}=1.3 and 1.55 {micro}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {micro}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure.

Authors:: Luo, Y; Hall, D C; Kou, L; Steingart, L; Jackson, J H; Blum, O; Hou, H

Publication Date:: Mon Aug 16 00:00:00 EDT 1999

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:: US Department of Energy (US)

OSTI Identifier:: 9755

Report Number(s):: SAND99-2115J
TRN: AH200125%%38

DOE Contract Number:: AC04-94AL85000

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Other Information: Submitted to Applied Physics Letters; PBD: 16 Aug 1999

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; OXIDES; REFRACTIVE INDEX; WAVEGUIDES; INFRARED SPECTRA

Citation Formats


                    Luo, Y, Hall, D C, Kou, L, Steingart, L, Jackson, J H, Blum, O, and Hou, H. Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides.  United States: N. p., 1999. 
        Web.  doi:10.1063/1.125236.

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                    Luo, Y, Hall, D C, Kou, L, Steingart, L, Jackson, J H, Blum, O, & Hou, H. Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides.  United States.  https://doi.org/10.1063/1.125236

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                    Luo, Y, Hall, D C, Kou, L, Steingart, L, Jackson, J H, Blum, O, and Hou, H. 1999.  
        "Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides".  United States.  https://doi.org/10.1063/1.125236.  https://www.osti.gov/servlets/purl/9755.

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@article{osti_9755,

  title        = {Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides},

  author       = {Luo, Y and Hall, D C and Kou, L and Steingart, L and Jackson, J H and Blum, O and Hou, H},

  abstractNote = {Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490 C. Refractive index, mode propagation constant, propagation loss ({le}3 cm{sup {minus}1}) at {lambda}=1.3 and 1.55 {micro}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {micro}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure.},

  doi          = {10.1063/1.125236},

  url          = {https://www.osti.gov/biblio/9755},
  journal      = {Applied Physics Letters},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Aug 16 00:00:00 EDT 1999},

  month        = {Mon Aug 16 00:00:00 EDT 1999}

}

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