Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Journal Article · Tue Mar 02 00:00:00 EST 2010 · Science

OSTI ID:973051

Bernevig, A

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an 'inverted' type at a critical thickness d{sub c}. We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 973051
• Report Number(s): SLAC-REPRINT-2010-057; SCEHDK; TRN: US201006%%237
• Journal Information: Science, Vol. 314, Issue 5806; ISSN 0193-4511
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MERCURY TELLURIDES
HALL EFFECT
QUANTUM WELLS
SPIN
PHASE TRANSFORMATIONS
CADMIUM TELLURIDES
THICKNESS
MATSCI