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Title: Quantum Spin Hall Effect in Inverted Type II Semiconductors

Abstract

The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure exhibits an 'inverted' phase similar to CdTe/HgTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking and inter-layer charge transfer are essential. By standard self-consistent calculations, we show that the QSH state persists when these corrections are included, and a quantum phase transition between the normal insulator and the QSH phase can be electrically tuned by the gate voltage.

Authors:
; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
973791
Report Number(s):
SLAC-PUB-13921
TRN: US201007%%394
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Phys.Rev.Lett.100:236601,2008
Additional Journal Information:
Journal Name: Phys.Rev.Lett.100:236601,2008
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALIGNMENT; ENERGY GAP; FERMI LEVEL; HALL EFFECT; QUANTUM WELLS; SPIN; SYMMETRY; SYMMETRY BREAKING; Other,MATSCI

Citation Formats

Liu, Chaoxing, /Tsinghua U., Beijing /Stanford U., Phys. Dept., Hughes, Taylor L, Qi, Xiao-Liang, /Stanford U., Phys. Dept., Wang, Kang, /UCLA, Zhang, Shou-Cheng, and /Stanford U., Phys. Dept. Quantum Spin Hall Effect in Inverted Type II Semiconductors. United States: N. p., 2010. Web.
Liu, Chaoxing, /Tsinghua U., Beijing /Stanford U., Phys. Dept., Hughes, Taylor L, Qi, Xiao-Liang, /Stanford U., Phys. Dept., Wang, Kang, /UCLA, Zhang, Shou-Cheng, & /Stanford U., Phys. Dept. Quantum Spin Hall Effect in Inverted Type II Semiconductors. United States.
Liu, Chaoxing, /Tsinghua U., Beijing /Stanford U., Phys. Dept., Hughes, Taylor L, Qi, Xiao-Liang, /Stanford U., Phys. Dept., Wang, Kang, /UCLA, Zhang, Shou-Cheng, and /Stanford U., Phys. Dept. Fri . "Quantum Spin Hall Effect in Inverted Type II Semiconductors". United States. https://www.osti.gov/servlets/purl/973791.
@article{osti_973791,
title = {Quantum Spin Hall Effect in Inverted Type II Semiconductors},
author = {Liu, Chaoxing and /Tsinghua U., Beijing /Stanford U., Phys. Dept. and Hughes, Taylor L and Qi, Xiao-Liang and /Stanford U., Phys. Dept. and Wang, Kang and /UCLA and Zhang, Shou-Cheng and /Stanford U., Phys. Dept.},
abstractNote = {The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure exhibits an 'inverted' phase similar to CdTe/HgTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking and inter-layer charge transfer are essential. By standard self-consistent calculations, we show that the QSH state persists when these corrections are included, and a quantum phase transition between the normal insulator and the QSH phase can be electrically tuned by the gate voltage.},
doi = {},
journal = {Phys.Rev.Lett.100:236601,2008},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {3}
}