Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Journal Article · Sat Jan 14 23:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617010109· OSTI ID:22649631

Krishtopenko, S. S.; Maremyanin, K. V.; Bovkun, L. S.; Spirin, K. E.; Kadykov, A. M. ^[1]; Marcinkiewicz, M.; Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. ^[2]; Semyagin, B. R.; Putyato, M. A.; Emelyanov, E. A.; Preobrazhenskii, V. V. ^[3]; Gavrilenko, V. I. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Universite Montpellier, Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 (France)
3. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

• OSTI ID: 22649631
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
BRILLOUIN ZONES
CONCENTRATION RATIO
CYCLOTRON RESONANCE
ELECTRONS
ENERGY GAP
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
LAYERS
QUANTUM WELLS
TWO-DIMENSIONAL SYSTEMS