Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States)
Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T – H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.
- OSTI ID:
- 22492771
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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